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FDP2532 - N-Channel MOSFET

Key Features

  • RDS(on) = 14 mW (Typ. ) @ VGS = 10 V, ID = 33 A.
  • QG(tot) = 82 nC (Typ. ) @ VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • These Devices are Pb.
  • Free, Halide Free and are RoHS Compliant.

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Datasheet Details

Part number FDP2532
Manufacturer onsemi
File Size 372.77 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP2532 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 150 V, 79 A, 16 mW FDP2532, FDB2532 Features • RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 33 A • QG(tot) = 82 nC (Typ.