FDPF2D3N10C, FDP2D3N10C Datasheet - ON Semiconductor

FDPF2D3N10C, FDP2D3N10C, N-Channel MOSFET

MOSFET * N-Channel, Shielded Gate POWERTRENCH) 100 V, 222 A, 2.3 mW FDP2D3N10C, FDPF2D3N10C General Description This N *Channel MV MOSF

Features

* Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A
* Extremely Low Reverse Recovery Charge, Qrr
* 100% UIL Tested

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter DATA SHEET www.
onsemi.
com VDS rDS(ON) MAX ID MAX 100 V 2.3 mW @ 10 V 222 A
* Drain current limited by maximum junction temperatu

FDP2D3N10C-ONSemiconductor.pdf