Description
MOSFET * N-Channel, Shielded Gate POWERTRENCH) 100 V, 222 A, 2.3 mW FDP2D3N10C, FDPF2D3N10C General .
This N.
Channel MV MOSFET is produced using onsemi’s
advanced POWERTRENCH process that incorporates Shielded Gate technology.
Features
* Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A
* Extremely Low Reverse Recovery Charge, Qrr
* 100% UIL Tested
Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter
DATA SHEET www. onsemi. com
VDS
rDS(ON) MAX
ID MAX
100 V
2.3 mW @ 10 V
222 A
* Drain current limited by maximum junction temperatu
