FDS6681Z
FDS6681Z is 30V P-Channel MOSFET manufactured by onsemi.
Description
This P- Channel MOSFET is produced using onsemi’s advanced
Power Trench process that has been especially tailored to minimize the on- state resistance.
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- - 20 A,
- 30 V
- RDS(ON) = 4.6 mΩ @ VGS =
- 10 V
- RDS(ON) = 6.5 mΩ @ VGS =
- 4.5 V
- Extended VGSS Range (- 25 V) for Battery Applications
- HBM ESD Protection Level of 8 k V Typical (Note 3)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- Termination is Lead- free and Ro HS pliant
- This is a Pb- Free and Halide Free Device
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS Drain- Source Voltage
- 30
VGSS Gate- Source Voltage
±25
Drain Current
Continuous (Note 1a)
- 20
Pulsed
- 105
PD Power Dissipation for Single Operation
(Note 1a) (Note 1b)
(Note 1c)
TJ, Operating and Storage Junction TSTG Temperature...
