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FDS6681Z Datasheet - ON Semiconductor

FDS6681Z 30V P-Channel MOSFET

This P *Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on *state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

FDS6681Z Features

* 20 A,

* 30 V

* RDS(ON) = 4.6 mΩ @ VGS =

* 10 V

* RDS(ON) = 6.5 mΩ @ VGS =

* 4.5 V

* Extended VGSS Range (

* 25 V) for Battery Applications

* HBM ESD Protection Level of 8 kV Typical (Note 3)

* High Performance Tren

FDS6681Z Datasheet (243.90 KB)