FDU8896

N-Channel Power MOSFET

ON Semiconductor

FDU8896 Features

* rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A

* rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A

* High performance trench technology for extremely low rDS(ON)

* Low gate charge

* High power and current handling capability D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) MOS

FDU8896 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications

* DC/DC converters Fea.

FDU8896 Datasheet (292.21 KB)