FDU8896 - N-Channel Power MOSFET

ON Semiconductor

FDU8896 Datasheet Preview — Preview of FDU8896 PDF

Datasheet Details

Part number	FDU8896
Manufacturer	ON Semiconductor ↗
File Size	292.21 KB
Description	N-Channel Power MOSFET
Datasheet	FDU8896-ONSemiconductor.pdf

FDU8896 Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. DC/DC converters

Features

rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A.
rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A.
High performance trench technology for extremely low rDS(ON).
Low gate charge.
High power and current handling capability D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Conti.

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Published: Jan 23, 2023 |