FGH40N60SMD-F085

IGBT

ON Semiconductor

* Maximum Junction Temperature: TJ = 175C

* Positive Temperature Co

* efficient for Easy Parallel Operating

* High Current Capability

* Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A

* High Input Impedance

* Tightened Parameter Distribution

* AEC Qualif

FGH40N60SMD-F085

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Igbt.

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FGH40N60SMD-F085 IGBT ON Semiconductor

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