FGH40T65SHDF Datasheet - ON Semiconductor

IGBT

FGH40T65SHDF Features

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Co

* efficient for Easy Parallel Operating

* High Current Capability

* Low Saturation Voltage: VCE(sat) = 1.45 V(Typ.) @ IC = 40 A

* 100% of the Parts Tested for ILM (Note 1)

* Hig

FGH40T65SHDF General Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO. Featu.

FGH40T65SHDF Datasheet (498.42 KB)