* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.45 V (Typ.) @ IC = 50 A
* 100% of the Parts are Tested for ILM (Note 2)
FGHL50T65MQD Datasheet (331.25 KB)
FGHL50T65MQD
331.25 KB
Igbt.
Field Stop Trench IGBT
650 V, 50 A
FGHL50T65MQD
Field stop 4th generation mid speed IGBT technology and full current rated copak Diode technology.
Fe.
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