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FGHL50T65MQD IGBT

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Description

Field Stop Trench IGBT 650 V, 50 A FGHL50T65MQD Field stop 4th generation mid speed IGBT technology and full current rated copak Diode technology.Fe.

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Features

* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.45 V (Typ. ) @ IC = 50 A
* 100% of the Parts are Tested for ILM (Note 2)

Applications

* Solar Inverter
* UPS, ESS
* PFC, Converters MAXIMUM RATINGS Parameter Symbol Value Unit Collector
* to
* Emitter Voltage VCES 650 V Gate
* to
* Emitter Voltage VGES ±20 V Transient Gate
* to
* Emitter Voltage VGES ±30 V Co

FGHL50T65MQD Distributors

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📌 All Tags

FGHL50T65MQD IGBT ON Semiconductor
ON Semiconductor FGHL50T65MQD-like datasheet
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FGHL50T65LQDT
FGHL50T65LQDTL4
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