* Maximum Junction Temperature : TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.47 V (Typ.) @ IC = 50 A
* 100% of the Parts tested for ILM(1)
* High In
FGHL50T65SQDT Datasheet (356.31 KB)
FGHL50T65SQDT
356.31 KB
Igbt.
IGBT - Field Stop, Trench 650 V, 50 A Product Preview FGHL50T65SQDT Using novel field stop IGBT technology, ON Semiconductor’s new series of field st.
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