FGHL75T65LQDTL4 IGBT

ON Semiconductor

Description

IGBT - Field Stop, Trench 650 V, 75 A FGHL75T65LQDTL4 .
Field stop 4th generation Low VCE(sat) IGBT technology and Full current rated copack Diode technology. Maximum Junction Temperature.

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Datasheet Specifications

Part number: FGHL75T65LQDTL4
Manufacturer: ON Semiconductor ↗
File Size: 420.42 KB
Datasheet: FGHL75T65LQDTL4-ONSemiconductor.pdf
Description: IGBT

Features

* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ. ) @ IC = 75 A
* 100% of the Part are Tested for ILM (Note 2)

Applications

* Solar Inverter
* UPS, ESS
* PFC, Converters MAXIMUM RATINGS Rating Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage Collector Current @ TC = 25°C (Note 1) Collector Current @ TC = 100°C Pulsed Collector Current (Note 2) Pulsed Collect

FGHL75T65LQDTL4 Distributors

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FGHL75T65LQDTL4 IGBT ON Semiconductor

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