* FOD8343T
* 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High
* Voltage Insulation
* 4.0 A Maximum Peak Output Current Driving Capability for Medium
* Power IGBT/MOSFET
* Use of P
* Channel MOSFETs at
FOD8343
343.43 KB
High speed gate drive optocoupler.
DATA SHEET www.onsemi.com
4.0 A Output Current, High Speed Gate Drive Optocoupler in Stretched Body SOP 6-Pin
SOIC6 CASE 751EL
SOIC6 W CASE 751EM
.
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