FQP3N50C
Features
- 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V
- Low gate charge ( typical 10 n C )
- Low Crss ( typical 8.5 p F)
- Fast switching
- 100 % avalanche tested
- Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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GD S
TO-220
FQP Series
GD S
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
Drain-Source Voltage Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C) Drain Current
- Pulsed
(Note 1)
Gate-Source Voltage Single Pulsed Avalanche...
