MBD770DWT1G Datasheet (ON Semiconductor)

MBD770DWT1G, Schottky Barrier Diodes

98ASB42985B Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

SC *88 2.00x1.25x0.90, 0.65P PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components In

MBD770DWT1G Features

* Extremely Fast Switching Speed

* Low Forward Voltage

* AEC Qualified and PPAP Capable

* NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

* These Devices are Pb

* Free, Halogen Free/BFR Free and are