MBRB30H30CT-1G Datasheet - ON Semiconductor

MBRB30H30CT-1G Power Rectifiers

MBRB30H30CT-1G Features

* Low Forward Voltage

* Low Power Loss/High Efficiency

* High Surge Capacity

* 150°C Operating Junction Temperature

* 30 A Total (15 A Per Diode Leg)

* Guard

* Ring for Stress Protection

* NRVBB Prefix for Automotive and Other Application

Datasheet Details

MBRB30H30CT-1G

96.09 KB

Power rectifiers.

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MBRB30H30CT-1G Power Rectifiers ON Semiconductor

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