MCH6321 - P-Channel Power MOSFET

ON Semiconductor

Datasheet Details

1.8V drive.
Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings --20 ±10 --4 --16 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those liste.

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Published: Oct 27, 2015 |