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MCH6001 NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier

MCH6001 Description

Ordering number : ENA1601 MCH6001 SANYO Semiconductors DATA SHEET MCH6001 .

MCH6001 Features

* NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Ampliļ¬er Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : |S21e|2=16dB typ (f=1GHz). Composite type with 2 RF transistor MCH4020 in

MCH6001 Applications

* outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for

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Datasheet Details

Part number
MCH6001
Manufacturer
Sanyo Semicon Device
File Size
276.03 KB
Datasheet
MCH6001_SanyoSemiconDevice.pdf
Description
NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier

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NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier Sanyo Semicon Device
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