MCH6124 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of MBIT process.
Large current capacity.
Low collector-to-emitter saturation voltage.
High speed switching.
Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm).
High allowable power dissipation.
IECO is guaranteed for preventing reverse ﬂow from the collector to the emitter Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Em.

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Published: Jan 30, 2016 |