MCH6123 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of MBIT process.
Large current capacity.
Low collector-to-emitter saturation voltage.
High speed switching.
Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm).
High allowable power dissipation Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collec.

📁 MCH6123 Similar Datasheet

MCH6101 - DC/DC Converter Applications (Sanyo)
MCH6102 - DC/DC Converter Applications (Sanyo)
MCH6103 - DC/DC Converter Applications (Sanyo)
MCH6001 - NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier (Sanyo Semicon Device)
MCH6201 - DC/DC Converter Applications (Sanyo)
MCH6202 - DC/DC Converter Applications (Sanyo)
MCH6203 - DC/DC Converter Applications (Sanyo)
MCH6302 - Ultrahigh-Speed Switching Applications (Sanyo)

Other Datasheets by ON Semiconductor

Published: Jan 30, 2016 |