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MGSF3454XT1 Datasheet - ON Semiconductor

MGSF3454XT1 Small-Signal MOSFETs Single N-Channel Field Effect Transistors

MGSF3454XT1 Product Preview Low RDS(on) Small-Signal MOSFETs Single N-Channel Field Effect Transistors These miniature surface mount MOSFETs utilize the High Cell Density, HDTMOS® process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc dc converters, power management in portable and battery powered products such as computers, printers, PCMCIA cards, cellular and cordles.

MGSF3454XT1 Features

* e E b 0.05 A1 A MGSF3454XT1 PACKAGE DIMENSIONS TSOP

* 6 CASE 318G

* 02 ISSUE V H L2 GAUGE PLANE L M DETAIL Z C SEATING PLANE c DETAIL Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEA

MGSF3454XT1 Datasheet (148.71 KB)