* Long Reverse Recovery Time trr = 300 ns (Typ)
* Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability
* Low Series Resistance @ 100 MHz
* RS = 0.7 W (Typ) @ IF = 10 mA
* Reverse Breakdown Voltage = 200 V (Min)
* These Device
MMBV3700LT1G Datasheet (106.16 KB)
MMBV3700LT1G
106.16 KB
High voltage silicon pin diodes.
MMBV3700LT1G
High Voltage Silicon Pin
Diodes
These devices are designed primarily for VHF band switching applications but are also suitable for use i.
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