MMBV3700LT1G Datasheet - ON Semiconductor

MMBV3700LT1G High Voltage Silicon Pin Diodes

MMBV3700LT1G Features

* Long Reverse Recovery Time trr = 300 ns (Typ)

* Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability

* Low Series Resistance @ 100 MHz

* RS = 0.7 W (Typ) @ IF = 10 mA

* Reverse Breakdown Voltage = 200 V (Min)

* These Device

Datasheet Details

MMBV3700LT1G

106.16 KB

High voltage silicon pin diodes.

📁 Related Datasheet

MMBV3700LT1 High Voltage Silicon Pin Diodes (Motorola)

MMBV3700LT1 Silicon Pin Diode (Leshan Radio Company)

MMBV3700LT1 High Voltage Silicon Pin Diodes (ON)

MMBV3102LT1 Silicon Tuning Diode (Motorola)

MMBV3102LT1 Silicon Tuning Diode (Leshan Radio Company)

MMBV3102LT1 Silicon Tuning Diode (ON Semiconductor)

MMBV3102LT1G Silicon Tuning Diode (ON Semiconductor)

MMBV3401 SURFACE MOUNT PIN DIODE (Pan Jit International)

MMBV3401 General Purpose PIN Diode (Kexin)

MMBV3401LT1 Silicon Pin Diode (ON Semiconductor)

TAGS

Image Gallery

MMBV3700LT1G Distributor