MMBV3700LT1G Datasheet - ON Semiconductor

MMBV3700LT1G High Voltage Silicon Pin Diodes

MMBV3700LT1G Features

* Long Reverse Recovery Time trr = 300 ns (Typ)

* Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability

* Low Series Resistance @ 100 MHz

* RS = 0.7 W (Typ) @ IF = 10 mA

* Reverse Breakdown Voltage = 200 V (Min)

* These Device

Datasheet Details

MMBV3700LT1G

106.16 KB

High voltage silicon pin diodes.

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