Description
MMDF4P03HD Preferred Device Power MOSFET 4 A, 30 V, P *Channel SO *8, Dual Dual MOSFET devices are designed for use in low voltage, high.
Features
* TAGE (VOLTS) Figure 7. Capacitance Variation
30
http://onsemi. com 4
MMDF4P03HD
VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns)
VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS)
7.0 QT
6.0
5.0
4.0 Q1
Q2
30
VGS 20
1000
VDD = 15 V
ID = 3 A
100
VGS = 10 V TJ = 25°C
td
Applications
* where power efficiency is important. Typical applications are dc
* dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk