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MMDL301T1G Silicon Hot-Carrier Diodes

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Description

DATA SHEET www.onsemi.com Silicon Hot-Carrier Diodes MMDL301T1G Schottky Barrier Diode These devices are designed primarily for high *efficien.
SOD. 323 1.

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Features

* Extremely Low Minority Carrier Lifetime
* 15 ps (Typ)
* Very Low Capacitance
* 1.5 pF (Max) @ VR = 15 V
* Low Reverse Leakage
* IR = 13 nAdc (Typ)
* These Devices are Pb
* Free, Halogen Free/BFR Free and are RoHS Compliant 30 VOLTS SILICON HOT

Applications

* They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low
* cost, high

MMDL301T1G Distributors

📁 Related Datasheet

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  • MMDL707 - Schottky Barrier Diode (LGE)

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