MMDL301T1 Datasheet | ETL

Silicon Hot- Carrier Diodes Schottky Barrier Diode These devices are designed primarily for high- efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low- cost, high- volume consumer and industrial/mercial requirements. They are available in a Surface Mount package. - Extremely Low Minority Carrier Lifetime - 15 ps (Typ) - Very Low Capacitance - 1.5 p F (Max) @ V R = 15 V - Low Reverse Leakage - I R = 13 n Adc (Typ) - Device Marking: 4T 1 CATHODE 2 ANODE MAXIMUM RATINGS ( T J =125°C unless otherwise noted ) Symbol Rating V R Reverse Voltage Value 30 30 VOLTS SILICON HOT- CARRIER DETECTOR AND SWITCHING DIODES 2 PLASTIC SOD- 323 CASE 477 Unit Volts THERMAL CHARACTERISTICS Symbol PD R θJA T J , T stg Characteristic Total Device Dissipation FR- 5 Board,- T A = 25°C Derate above 25°C Thermal Resistance...