MMDL301T1G Overview
Silicon Hot-Carrier Diodes MMDL301T1G Schottky Barrier Diode These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/mercial requirements.
MMDL301T1G Key Features
- Extremely Low Minority Carrier Lifetime
- 15 ps (Typ)
- Very Low Capacitance
- 1.5 pF (Max) @ VR = 15 V
- Low Reverse Leakage
- IR = 13 nAdc (Typ)
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
- 0.9 1.5 pF
- 13 200 nAdc
- 0.38 0.45 Vdc
