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MPS2907A Series
General Purpose Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
Symbol VCEO VCBO VEBO
IC PD
Value −60 −60 −5.0 −600 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
MPS2907A Datasheet
