MUN5116DW1T1G, MUN5116DW1 Datasheet - ON Semiconductor

MUN5116DW1T1G Dual PNP Bias Resistor Transistors

MUN5116DW1, NSBA143TDXV6 Dual PNP Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into.

MUN5116DW1T1G Features

* Simplifies Circuit Design

* Reduces Board Space

* Reduces Component Count

* S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

* These Devices are Pb-Free, Halogen Free/BFR Free and a

MUN5116DW1-ONSemiconductor.pdf