NCD57090E Datasheet - ON Semiconductor

NCD57090E IGBT/MOSFET Gate Driver

Pin Name No. I/O Description VDD1 1 Power Input side power supply. A good quality bypassing capacitor is required from this pin to GND1 and should be placed close to the pins for best results. The under voltage lockout (UVLO) circuit enables the device to operate at power on when a typical.

Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y (x = D or V, y = A, B, C, D, E or F) NCx57090y, NCx57091y are high current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate hi.

NCD57090E Features

* High Peak Output Current (+6.5 A/

* 6.5 A)

* Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn

* on (Version A/D/F)

* Short Propagation Delays with Accurate Matching

* IGBT/MOSFET Gate Clamping during Short

NCD57090E Datasheet (1.91 MB)