NGTB30N65IHL2WG
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NGTB30N60FLWG - IGBT
(ON Semiconductor)
NGTB30N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior perf.
NGTB30N60FWG - IGBT
(ON Semiconductor)
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This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior perfo.
NGTB30N60IHLWG - IGBT
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This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov.
NGTB30N60L2WG - N-Channel IGBT
(ON Semiconductor)
Ordering number : ENA2308B
NGTB30N60L2WG
N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V
http://onsemi.
Features
• IGBT VCE(.
NGTB30N60SWG - IGBT
(ON Semiconductor)
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IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provide.
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(ON Semiconductor)
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This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi.
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(ON Semiconductor)
NGTB30N120IHRWG
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This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Sto.
NGTB30N120IHSWG - IGBT
(ON Semiconductor)
NGTB30N120IHSWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi.
NGTB30N120L2WG - IGBT
(ON Semiconductor)
NGTB30N120L2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct.