Part number:
NGTB30N65IHL2WG
Manufacturer:
File Size:
156.28 KB
Description:
Igbt.
NGTB30N65IHL2WG-ONSemiconductor.pdf
Datasheet Details
NGTB30N65IHL2WG Features
* a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft
NGTB30N65IHL2WG-ONSemiconductor.pdf
Datasheet Details
NGTB30N65IHL2WG
156.28 KB
Igbt.
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