Part number:
NGTB30N60L2WG
Manufacturer:
File Size:
764.45 KB
Description:
N-channel igbt.
NGTB30N60L2WG Datasheet (764.45 KB)
* IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)
* IGBT IC=100A (Tc=25°C)
* IGBT tf=80ns typ.
* Low switching loss in higher frequency applications
* Maximum junction temperature Tj=175°C
* Diode VF=1.7V typ. (IF=30A)
* Diode trr=70ns typ.
NGTB30N60L2WG Datasheet (764.45 KB)
NGTB30N60L2WG
764.45 KB
N-channel igbt.
📁 Related Datasheet
NGTB30N60FLWG - IGBT
(ON Semiconductor)
NGTB30N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior perf.
NGTB30N60FWG - IGBT
(ON Semiconductor)
NGTB30N60FWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior perfo.
NGTB30N60IHLWG - IGBT
(ON Semiconductor)
NGTB30N60IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov.
NGTB30N60SWG - IGBT
(ON Semiconductor)
NGTB30N60SWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provide.
NGTB30N65IHL2WG - IGBT
(ON Semiconductor)
NGTB30N65IHL2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov.
NGTB30N120FL2WG - IGBT
(ON Semiconductor)
NGTB30N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construc.
NGTB30N120IHLWG - IGBT
(ON Semiconductor)
NGTB30N120IHLWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi.
NGTB30N120IHRWG - IGBT
(ON Semiconductor)
NGTB30N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Sto.
