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NGTB40N120FL3WG - IGBT

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Features

  • a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching.

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IGBT - Ultra Field Stop NGTB40N120FL3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
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