NGTB40N120IHRWG - IGBT

Datasheet Summary

Features

a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching.

ON Semiconductor

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Datasheet Details

Part number	NGTB40N120IHRWG
Manufacturer	ON Semiconductor
File Size	177.04 KB
Description	IGBT
Datasheet	NGTB40N120IHRWG Datasheet
Additional preview pages of the NGTB40N120IHRWG datasheet.

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NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

Published: Nov 28, 2019 |