NGTB45N60SWG - IGBT

Features

a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching.

onsemi

Datasheet Details

Part number	NGTB45N60SWG
Manufacturer	onsemi
File Size	266.46 KB
Description	IGBT
Datasheet	NGTB45N60SWG Datasheet
Additional preview pages of the NGTB45N60SWG datasheet.

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Full PDF Text Transcription

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IGBT NGTB45N60SWG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Published: Aug 27, 2017 |