* Diode Clamp Between Gate and Source
* ESD Protection
* HBM 5000 V
* Active Over
* Voltage Gate to Drain Clamp
* Scalable to Lower or Higher RDS(on)
* Internal Series Gate Resistance
* AEC
* Q101 Qualified and PPAP Capable
NID9N05BCL Datasheet (165.07 KB)
NID9N05BCL
165.07 KB
N-channel power mosfet.
NID9N05ACL, NID9N05BCL
Power MOSFET
9.0 A, 52 V, N
*Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package
Benefits
.
📁 Related Datasheet
NID9N05ACL N-Channel Power MOSFET (ON Semiconductor)
NID9N05CL Power MOSFET (ON Semiconductor)
NID1100 1A ideal diode (nexperia)
NID5001N Self-protected FET (ON Semiconductor)
NID5003N Single N-Channel DPAK (ON Semiconductor)
NID5004N Self-Protected FET (ON Semiconductor)
NID6002N Self-Protected FET (ON Semiconductor)
NI-100M-6900 100MHz Ultra Low Noise/Low G-Sensitivity OCXO (TAITIEN)
NI-100M-6901 100MHz Ultra Low Noise/Low G-Sensitivity OCXO (TAITIEN)
NI-100M-6910 100MHz Ultra Low Noise/Low G-Sensitivity OCXO (TAITIEN)
