NSBC114EPDP6, NSBC114EPDXV6 Datasheet - ON Semiconductor

NSBC114EPDP6 - Complementary Bias Resistor Transistors

MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual compone.

NSBC114EPDP6 Features

* Simplifies Circuit Design

* Reduces Board Space

* Reduces Component Count

* S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

* These Devices are Pb-Free, Ha

NSBC114EPDXV6-ONSemiconductor.pdf