NSBC114EPDXV6T5 Datasheet - ON Semiconductor

NSBC114EPDXV6T5 Dual Bias Resistor Transistors

NSBC114EPDXV6T1, NSBC114EPDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual compone.

NSBC114EPDXV6T5 Features

* 25°C 75°C 25°C Cob, CAPACITANCE (pF) Vin, INPUT VOLTAGE (VOLTS) 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current 50 http://onsemi.com 7 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTI

NSBC114EPDXV6T5 Datasheet (170.62 KB)