NSS12200WT1G Datasheet - ON Semiconductor

NSS12200WT1G Low VCE(sat) PNP Transistor

www.DataSheet4U.com NSS12200WT1G 12 V, 3 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC DC converters and power management in portable and battery powered produ.

NSS12200WT1G Features

* http://onsemi.com 12 VOLTS 3.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 163 mW COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER

* High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size This is a

NSS12200WT1G Datasheet (84.51 KB)