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NTBL045N065SC1 - SiC MOSFET

Features

  • Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V.
  • Ultra Low Gate Charge (QG(tot) = 105 nC).
  • Low Effective Output Capacitance (Coss = 162 pF).
  • 100% Avalanche Tested.
  • TJ = 175°C.
  • RoHS Compliant Typical.

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Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M2, TOLL NTBL045N065SC1 Features • Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100% Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies) • Solar Inverters • UPS (Uninterruptable Power Supplies) • Energy Storage MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate − Source Voltage TC < 175°C VDSS 650 V VGS −8/+22.
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