Datasheet Summary
Silicon Carbide (SiC) MOSFET
- EliteSiC, 33 mohm, 650 V, M2, TOLL
Features
- Typ. RDS(on) = 33 mW @ VGS = 18 V
Typ. RDS(on) = 45 mW @ VGS = 15 V
- Ultra Low Gate Charge (QG(tot) = 105 nC)
- Low Effective Output Capacitance (Coss = 162 pF)
- 100% Avalanche Tested
- TJ = 175°C
- RoHS pliant
Typical Applications
- SMPS (Switching Mode Power Supplies)
- Solar Inverters
- UPS (Uninterruptable Power Supplies)
- Energy Storage
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate
- Source Voltage
TC < 175°C
VDSS
- 8/+22.6 V
VGSop
- 5/+18 V
Continuous...