NTD6416ANL
Features
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Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb- Free Devices
V(BR)DSS Value 100 $20 19 13 PD IDM TJ, Tstg IS EAS 71 70
- 55 to +175 19 50 W A °C A m J 1 2 TL 260 °C 3 G Unit V V A 100 V http://onsemi.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage
- Continuous Continuous Drain Current Power Dissipation Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C Symbol VDSS VGS ID
RDS(on) MAX 74 m W @ 10 V
ID MAX 19 A
D tp = 10 ms
Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain- to- Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 18.2 A, L = 0.3 m H, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds
S 4 4
THERMAL RESISTANCE RATINGS
Parameter .. Junction- to- Case (Drain)
- Steady State Junction- to- Ambient
- Steady State (Note 1) Symbol Rq JC Rq JA Max 2.1 47 Unit °C/W
DPAK CASE...
