NTD6414AN
Features
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Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant http://onsemi.
ID MAX (Note 1) 32 A
V(BR)DSS 100 V
RDS(on) MAX 37 m W @ 10 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage
- Continuous Continuous Drain Current Rq JC Power Dissipation Rq JC Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 $20 32 22 100 117
- 55 to +175 32 154 W Unit V V A
N- Channel D
G A °C A m J 1 2 4 1 3 S 4 tp = 10 ms
Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain- to- Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 32 A, L = 0.3 m H, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds
°C
THERMAL RESISTANCE RATINGS
.. Parameter Symbol Rq JC Rq JA Max 1.5 37 Unit °C/W Junction- to- Case...
