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NTD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW
Features
• • • •
Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb−Free Devices
V(BR)DSS Value 100 $20 19 13 PD IDM TJ, Tstg IS EAS 71 70 −55 to +175 19 50 W A °C A mJ 1 2 TL 260 °C 3 G Unit V V A 100 V
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current Power Dissipation Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C Symbol VDSS VGS ID
RDS(on) MAX 74 mW @ 10 V
ID MAX 19 A
D
tp = 10 ms
Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 18.2 A, L = 0.
NTD6416ANL Datasheet
