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NTHD4N02F Power MOSFET and Schottky Diode

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Description

NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N *Channel, with 3.7 A Schottky Barrier Diode, ChipFETt .

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Features

* Leadless SMD Package Featuring a MOSFET and Schottky Diode
* 40% Smaller than TSOP
* 6 Package with Better Thermals
* Super Low Gate Charge MOSFET
* Ultra Low VF Schottky
* Pb

Applications

* Fast Switching, low Gate Charge for DC
* to
* DC Buck and Boost Converters
* Li
* Ion Battery Applications in Cell Phones, PDAs, DSCs, and Media Players
* Load Side Switching MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val

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