NTH080C3
Saronix
121.04kb
Crystal clock oscillator. A crystal controlled, low current, low jitter and high frequency oscillator with precise rise and fall times demanded in networking a
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📁 Related Datasheet
NTH027N65S3F - N-Channel MOSFET
(ON Semiconductor)
MOSFET – Power, N-Channel, SUPERFET III, FRFET
650 V, 75 A, 27.4 mW
NTH027N65S3F
Description SUPERFET III MOSFET is onsemi’s brand−new high voltage
s.
NTH2xxx - (NTH Series) Crystal Clock Oscillator
(Saronix)
SaRonix
Crystal Clock Oscillator Technical Data
Frequency Range: Frequency Stability: 0.5 MHz to 106.25 MHz ±20, ±25, ±50 or ±100 ppm over all conditi.
NTH4302 - HD3e Quad N-Channel
(ON Semiconductor)
NTH4302
Product Preview HD3e Quad N−Channel
The NTH4302 is the first integrated Quad FET in a single package. It is the integration of 4 planar TMOS .
NTH4L013N120M3S - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L
NTH4L013N120M3S
Features
• Typ. RDS(on) = 13 mW @ .
NTH4L014N120M3P - SiC MOSFET
(ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L
NTH4L014N120M3P
Features
• Typ. RDS(on) = 14 mW @ VGS = 18 V • Low Switching.
NTH4L015N065SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L
NTH4L015N065SC1
Features
• Typ. RDS(on) = 12 mW @ .
NTH4L020N090SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-4L
V(BR)DSS 900 V
RDS(ON) MAX 28 mW @ 15 V
ID MAX 11.
NTH4L020N120SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
NTH4L020N120SC1
Features
• Typ. RDS(on) = 20 mW •.
NTH4L022N120M3S - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
V(BR)DSS 1200 V
RDS(ON) MAX 30 mW @ 18 V
D
ID M.
NTH4L023N065M3S - SiC MOSFET
(ON Semiconductor)
.
