NTH4L020N090SC1 - SiC MOSFET
NTH4L020N090SC1 Features
* Typ. RDS(on) = 20 mW @ VGS = 15 V Typ. RDS(on) = 16 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 196 nC)
* Low Effective Output Capacitance (Coss = 296 pF)
* 100% UIL Tested
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
