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NTH4L020N090SC1 Datasheet - ON Semiconductor

NTH4L020N090SC1 SiC MOSFET

NTH4L020N090SC1 Features

* Typ. RDS(on) = 20 mW @ VGS = 15 V Typ. RDS(on) = 16 mW @ VGS = 18 V

* Ultra Low Gate Charge (QG(tot) = 196 nC)

* Low Effective Output Capacitance (Coss = 296 pF)

* 100% UIL Tested

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

NTH4L020N090SC1-ONSemiconductor.pdf

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Datasheet Details

Part number:

NTH4L020N090SC1

Manufacturer:

ON Semiconductor ↗

File Size:

350.48 KB

Description:

Sic mosfet.

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