NTH4L023N065M3S - SiC MOSFET
NTH4L023N065M3S Features
* Typical RDS(on) = 23 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 69 nC)
* High Speed Switching with Low Capacitance (Coss = 153 pF)
* 100% Avalanche Tested
* This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb
* Free 2LI (on seco
