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NTH4L023N065M3S - SiC MOSFET

NTH4L023N065M3S Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L V(BR)DSS 650 V RDS(ON) TYP 23 mW @ 18 V ID MAX 6.

NTH4L023N065M3S Features

* Typical RDS(on) = 23 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 69 nC)
* High Speed Switching with Low Capacitance (Coss = 153 pF)
* 100% Avalanche Tested
* This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb
* Free 2LI (on seco

NTH4L023N065M3S Applications

* SMPS, Solar Inverters, UPS, Energy Storages, EV Charging Infrastructure MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Continuous Drain Current Power Dissipation Continuous Dr

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