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NTH4L023N065M3S Datasheet - ON Semiconductor

NTH4L023N065M3S SiC MOSFET

NTH4L023N065M3S Features

* Typical RDS(on) = 23 mW @ VGS = 18 V

* Ultra Low Gate Charge (QG(tot) = 69 nC)

* High Speed Switching with Low Capacitance (Coss = 153 pF)

* 100% Avalanche Tested

* This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb

* Free 2LI (on seco

NTH4L023N065M3S Datasheet (450.48 KB)

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Datasheet Details

Part number:

NTH4L023N065M3S

Manufacturer:

ON Semiconductor ↗

File Size:

450.48 KB

Description:

Sic mosfet.

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