Datasheet Specifications
- Part number
- NTH4L023N065M3S
- Manufacturer
- ON Semiconductor ↗
- File Size
- 450.48 KB
- Datasheet
- NTH4L023N065M3S-ONSemiconductor.pdf
- Description
- SiC MOSFET
Description
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L V(BR)DSS 650 V RDS(ON) TYP 23 mW @ 18 V ID MAX 6.Features
* Typical RDS(on) = 23 mW @ VGS = 18 VApplications
* SMPS, Solar Inverters, UPS, Energy Storages, EV Charging Infrastructure MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit DrainNTH4L023N065M3S Distributors
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