| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
onsemi | NTH4L023N065M3S | SIC MOS TO247-4L 23MOHM 650V M3S | DigiKey | 546 | 450 units |
$6.56
|
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Download Datasheet (450.48 KB)
NTH4L023N065M3S
450.48 KB
Sic mosfet.
DATA SHEET www.onsemi.com
Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L
.
V(BR)DSS 650 V
RDS(ON) TYP 23 mW @ 18 V
ID MAX 67 A
D
NTH4L023N065M3S
Features
* Typical RDS(on).
📁 Related Datasheet
NTH4L020N090SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-4L
V(BR)DSS 900 V
RDS(ON) MAX 28 mW @ 15 V
ID MAX 11.
NTH4L020N120SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
NTH4L020N120SC1
Features
• Typ. RDS(on) = 20 mW •.
NTH4L022N120M3S - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
V(BR)DSS 1200 V
RDS(ON) MAX 30 mW @ 18 V
D
ID M.
NTH4L025N065SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, TO-247-4L
NTH4L025N065SC1
Features
• Typ. RDS(on) = 19 mW @ .
NTH4L027N65S3F - N-Channel MOSFET
(ON Semiconductor)
MOSFET – Power, N-Channel, SUPERFET) III, FRFET)
650 V, 75 A, 27.4 mW
NTH4L027N65S3F
Description SUPERFET III MOSFET is ON Semiconductor’s brand−new h.
NTH4L028N170M1 - SiC MOSFET
(ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L
NTH4L028N170M1
Features
• Typ. RDS(on) = 28 mW @ VGS = 20 V • Ultra Low Gate .
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