NTH4L020N120SC1 Datasheet - ON Semiconductor

SiC MOSFET

* Typ. RDS(on) = 20 mW

* Ultra Low Gate Charge (QG(tot) = 220 nC)

* High Speed Switching with Low Capacitance (Coss = 258 pF)

* 100% Avalanche Tested

* TJ = 175°C

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

* Free 2LI (o

NTH4L020N120SC1

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Sic mosfet.

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NTH4L020N120SC1 SiC MOSFET ON Semiconductor

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