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NTH4L020N120SC1 - SiC MOSFET

NTH4L020N120SC1 Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L NTH4L020N120SC1 .

NTH4L020N120SC1 Features

* Typ. RDS(on) = 20 mW
* Ultra Low Gate Charge (QG(tot) = 220 nC)
* High Speed Switching with Low Capacitance (Coss = 258 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (o

NTH4L020N120SC1 Applications

* UPS
* DC-DC Converter
* Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 1200 V Gate
* to
* Source Voltage VGS
* 15/+25 V Recommended Operation Values TC

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SiC MOSFET ON Semiconductor
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