NTH4L022N120M3S - SiC MOSFET
NTH4L022N120M3S Features
* Typ. RDS(on) = 22 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 137 nC)
* High Speed Switching with Low Capacitance (Coss = 146 pF)
* 100% Avalanche Tested
* This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb
* Free 2LI (on Second
