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NTH4L022N120M3S - SiC MOSFET

NTH4L022N120M3S Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L V(BR)DSS 1200 V RDS(ON) MAX 30 mW @ 18 V.

NTH4L022N120M3S Features

* Typ. RDS(on) = 22 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 137 nC)
* High Speed Switching with Low Capacitance (Coss = 146 pF)
* 100% Avalanche Tested
* This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb
* Free 2LI (on Second

NTH4L022N120M3S Applications

* Solar Inverters
* Electric Vehicle Charging Stations
* UPS (Uninterruptible Power Supplies)
* Energy Storage Systems
* SMPS (Switch Mode Power Supplies) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to

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SiC MOSFET ON Semiconductor
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