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NTH4L028N170M1 - SiC MOSFET

ON Semiconductor

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Datasheet Details

Part number	NTH4L028N170M1
Manufacturer	ON Semiconductor ↗
File Size	298.57 KB
Description	SiC MOSFET
Datasheet	NTH4L028N170M1-ONSemiconductor.pdf

NTH4L028N170M1 Product details

Features

Typ. RDS(on) = 28 mW @ VGS = 20 V.
Ultra Low Gate Charge (QG(tot) = 200 nC).
High Speed Switching with Low Capacitance (Coss = 200 pF).
100% Avalanche Tested.
These Devices are Pb.
Free and are RoHS Compliant Typical.

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Published: Feb 16, 2023 |