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NTH4L028N170M1 SiC MOSFET

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Description

Silicon Carbide (SiC) MOSFET * EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L NTH4L028N170M1 .

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Features

* Typ. RDS(on) = 28 mW @ VGS = 20 V
* Ultra Low Gate Charge (QG(tot) = 200 nC)
* High Speed Switching with Low Capacitance (Coss = 200 pF)
* 100% Avalanche Tested
* These Devices are Pb

Applications

* UPS
* DC
* DC Converter
* Boost Converter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 1700 V Gate
* to
* Source Voltage VGS
* 15/+25 V Recommended Operation Va

NTH4L028N170M1 Distributors

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