NTH4L028N170M1 - SiC MOSFET
NTH4L028N170M1 Features
* Typ. RDS(on) = 28 mW @ VGS = 20 V
* Ultra Low Gate Charge (QG(tot) = 200 nC)
* High Speed Switching with Low Capacitance (Coss = 200 pF)
* 100% Avalanche Tested
* These Devices are Pb
* Free and are RoHS Compliant Typical Applications
* UPS
