NTH4L028N170M1 SiC MOSFET

ON Semiconductor

Description

Silicon Carbide (SiC) MOSFET * EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L NTH4L028N170M1 .

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Datasheet Specifications

Part number: NTH4L028N170M1
Manufacturer: ON Semiconductor ↗
File Size: 298.57 KB
Datasheet: NTH4L028N170M1-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 28 mW @ VGS = 20 V
* Ultra Low Gate Charge (QG(tot) = 200 nC)
* High Speed Switching with Low Capacitance (Coss = 200 pF)
* 100% Avalanche Tested
* These Devices are Pb

Applications

* UPS
* DC
* DC Converter
* Boost Converter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 1700 V Gate
* to
* Source Voltage VGS
* 15/+25 V Recommended Operation Va

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NTH4L028N170M1 SiC MOSFET ON Semiconductor

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