NTH4L025N065SC1 SiC MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 19 mohm, 650 V, M2, TO-247-4L NTH4L025N065SC1 .

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Datasheet Specifications

Part number: NTH4L025N065SC1
Manufacturer: ON Semiconductor ↗
File Size: 342.25 KB
Datasheet: NTH4L025N065SC1-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 164 nC)
* Low Capacitance (Coss = 278 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant with exemption 7a, P

Applications

* SMPS (Switching Mode Power Supplies)
* Solar Inverters
* UPS (Uninterruptable Power Supplies)
* Energy Storages MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 650 V Gate
* to

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NTH4L025N065SC1 SiC MOSFET ON Semiconductor

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