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NTH4L014N120M3P SiC MOSFET

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Description

Silicon Carbide (SiC) MOSFET * EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L NTH4L014N120M3P .

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Features

* Typ. RDS(on) = 14 mW @ VGS = 18 V
* Low Switching Losses (Typ. EON 1308 mJ at 74 A, 800 V)
* 100% Avalanche Tested

Applications

* Solar Inverters
* Electric Vehicle Charging Stations
* UPS (Uninterruptible Power Supplies)
* Energy Storage Systems
* SMPS (Switch Mode Power Supplies) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to

NTH4L014N120M3P Distributors

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SiC MOSFET ON Semiconductor
ON Semiconductor NTH4L014N120M3P-like datasheet