NTH4L015N065SC1 Datasheet - ON Semiconductor

NTH4L015N065SC1 - SiC MOSFET

NTH4L015N065SC1 Features

* Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. RDS(on) = 15 mW @ VGS = 15 V

* Ultra Low Gate Charge (QG(tot) = 283 nC)

* High Speed Switching with Low Capacitance (Coss = 430 pF)

* 100% Avalanche Tested

* TJ = 175°C

* This Device is Halide Free and RoHS Comp

Datasheet Details

NTH4L015N065SC1

351.08 KB

Sic mosfet.

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