NTH4L013N120M3S Datasheet - ON Semiconductor

SiC MOSFET

* Typ. RDS(on) = 13 mW @ VGS = 18 V

* Ultra Low Gate Charge (QG(tot) = 254 nC)

* High Speed Switching with Low Capacitance (Coss = 262 pF)

* 100% Avalanche Tested

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

* Free 2LI (on second

NTH4L013N120M3S

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Sic mosfet.

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NTH4L013N120M3S SiC MOSFET ON Semiconductor

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