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NTH4L013N120M3S Datasheet - ON Semiconductor

NTH4L013N120M3S - SiC MOSFET

NTH4L013N120M3S Features

* Typ. RDS(on) = 13 mW @ VGS = 18 V

* Ultra Low Gate Charge (QG(tot) = 254 nC)

* High Speed Switching with Low Capacitance (Coss = 262 pF)

* 100% Avalanche Tested

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

* Free 2LI (on second

NTH4L013N120M3S-ONSemiconductor.pdf

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Datasheet Details

Part number:

NTH4L013N120M3S

Manufacturer:

ON Semiconductor ↗

File Size:

328.43 KB

Description:

Sic mosfet.

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