NTH4L013N120M3S SiC MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L NTH4L013N120M3S .

📥 Download Datasheet

NTH4L013N120M3S Datasheet Preview — Preview of NTH4L013N120M3S PDF

Datasheet Specifications

Part number: NTH4L013N120M3S
Manufacturer: ON Semiconductor ↗
File Size: 328.43 KB
Datasheet: NTH4L013N120M3S-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 13 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 254 nC)
* High Speed Switching with Low Capacitance (Coss = 262 pF)
* 100% Avalanche Tested
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (on second

Applications

* Solar Inverters
* Electric Vehicle Charging Stations
* UPS (Uninterruptible Power Supplies)
* Energy Storage Systems
* SMPS (Switch Mode Power Supplies) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to

NTH4L013N120M3S Distributors

📁 Related Datasheet

NTH080C3 NTH2xxx NTH5G10Pxxxx NTH5G16P39B223J07TH NTH5G16Pxxxx NTH5G20Pxxxx

📌 All Tags

NTH4L013N120M3S SiC MOSFET ON Semiconductor

ON Semiconductor NTH4L013N120M3S-like datasheet